STW13009 High voltage fast-switching NPN power transistor
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.
It uses a Hollow emitter structure to enhance switching speeds
技术特性
- Low spread of dynamic parameters
- High voltage capability
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
应用领域
- Switch mode power supplies
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内部原理图
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STW13009 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| STW13009 |
Active |
|
1000 |
TO-247 |
Tube |
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STW13009 |
DATASHEET
| 描述 |
版本 |
大小 |
| STW13009 :High voltage fast-switching NPN power transistor |
1 |
196KB |
