TIP147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage
技术特性
- Monolithic Darlington configuration
- Integrated antiparallel collector-emitter diode
应用领域
- Linear and switching industrial equipment
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内部原理图
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TIP147 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| TIP147 |
Active |
|
1000 |
TO-247 |
Tube |
|
TIP147 |
DATASHEET
| 描述 |
版本 |
大小 |
| TIP147 :DS0857: Complementary power Darlington transistors |
8 |
136KB |
