技术特性

• Full diode bridge with integrated clamping protection
• Breakdown voltage: VBR = 6 V min.
• Peak pulse power dissipation: PPP = 500 W (8/20 µs)
• Very low capacitance, compatible with high debit data or signal rates

功能框图

应用领域

• Universal Serial Bus ports
• RS-423 interfaces
• RS-485 interfaces
• ISDN equipment
• T1/E1 line cards
• HDSL / ASDL interfaces

Benefits

• Provides protection for each line and between the supply voltage and GND: 25 A, 8/20 μs.
• High ESD protection level: up to level 3 per MIL STD 883C-Method 3015-6
• Separated inputs and outputs (so-called 4-point structure) to improve ESD susceptibility.
• Comprehensive package pin-out for immediate implementation.

Complies with the following standards:

• MIL-STD 883G Method 3015-7 Class 3B:
  – 8 kV
  IEC 61000-4-2 level 4:
• – 15 kV (air discharge)
  – 8 kV (contact discharge)