技术特性

• Ultra low diode capacitance (1.2 pF max)
• Two data lines (D+ and D-) protected against 15 kV ESD
• Breakdown voltage VBR= 6.0 V min
• Flip Chip 400 μm pitch, lead-free
• Very low leakage current
• Very small PCB area
• RoHS compliant
• Benefits
  • Minimized impact on rise and fall times for maximum data integrity
  • Low PCB space occupation
  • Higher reliability offered by monolithic integration
• Complies with the following standards
  • IEC 61000-4-2 level 4 on external pins:
    • 15 kV (air discharge)
    • 8 kV (contact discharge)
  • MIL STD 883G - Method 3015.7
    • 25 kV (Human body model)

Benefits

• ■ Minimized impact on rise and fall times for maximum data integrity
• ■ Low PCB space occupation
• ■ Higher reliability offered by monolithic integration

Complies with the following standards:

• ■ IEC 61000-4-2 level 4 on external pins:
  – 15 kV (air discharge)
  – 8 kV (contact discharge)
• ■ MIL STD 883G - Method 3015.7
  – 25 kV (Human body model)

功能框图