VND10N06 OMNIFET :FULLY AUTOPROTECTED POWER MOSFET
The VND10N06 and VND10N06-1 are monolithic devices designed in STMicroelectronics VIPower M0-2 technology, intended for replacement of standard Power MOSFETs in DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
技术特性
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Logic level input threshold
- ESD protection
- Schmitt trigger on input
- High noise immunity
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功能框图
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VND10N06 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| VND10N0613TR |
Active |
0.694 |
|
DPAK |
Tape And Reel |
|
VND10N0613TR |
| VND10N06-E |
Active |
0.694 |
|
DPAK |
Tube |
|
VND10N06-E |
| VND10N06TR-E |
Active |
0.694 |
|
DPAK |
Tape And Reel |
|
VND10N06TR-E |
| VND10N06 |
Active |
0.694 |
|
DPAK |
Tube |
|
VND10N06 |
DATASHEET
| 描述 |
版本 |
大小 |
| DS1002 : "OMNIFET" fully autoprotected Power MOSFET |
3 |
501KB |
