VND5N07 OMNIFET :FULLY AUTOPROTECTED POWER MOSFET
The VND5N07, VND5N07-1, VNP5N07FI and VNK5N07FM are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
技术特性
- LINEAR CURRENT LIMITATION
- THERMAL SHUT DOWN
- SHORT CIRCUIT PROTECTION
- INTEGRATED CLAMP
- LOW CURRENT DRAWN FROM INPUT PIN
- DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
- ESD PROTECTION
- DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
- COMPATIBLE WITH STANDARD POWER MOSFET
|
功能框图
|
VND5N07 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
VND5N0713TR |
Active |
0.779 |
|
DPAK |
Tape And Reel |
|
VND5N0713TR |
VND5N07TR-E |
Active |
0.779 |
|
DPAK |
Tape And Reel |
|
VND5N07TR-E |
VND5N07-1-E |
Active |
0.779 |
|
IPAK |
Tube |
|
VND5N07-1-E |
VND5N07 |
Active |
0.779 |
|
DPAK |
Tube |
|
VND5N07 |
VND5N07-1 |
Active |
0.779 |
|
IPAK |
Tube |
|
VND5N07-1 |
VND5N07-E |
Active |
0.779 |
|
DPAK |
Tube |
|
VND5N07-E |
DATASHEET
描述 |
版本 |
大小 |
VND5N07 : OMNIFET II fully autoprotected Power MOSFET |
3 |
503KB |