VNL5050N3-E OMNIFET III fully protected low-side driver
The VNL5050N3-E and VNL5050S5-E are monolithic devices made using STMicroelectronics VIPower Technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off.
技术特性
- Drain current: 19 A
- ESD protection
- Overvoltage clamp
- Thermal shutdown
- Current and power limitation
- Very low standby current
- Very low electromagnetic susceptibility
- In compliance with the 2002/95/EC european directive
- Open drain status output
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功能框图
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VNL5050N3-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| VNL5050N3TR-E |
Active |
0.579 |
|
SOT-223 |
Tape And Reel |
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VNL5050N3TR-E |
| VNL5050N3-E |
Active |
0.579 |
|
SOT-223 |
Tube |
|
VNL5050N3-E |
DATASHEET
| 描述 |
版本 |
大小 |
| VNL5050N3-E : OMNIFET III fully protected low-side driver |
4 |
491KB |
