VNN7NV04P-E OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET
The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
技术特性
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
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功能框图
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VNN7NV04P-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| VNN7NV04PTR-E |
Active |
0.579 |
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SOT-223 |
Tape And Reel |
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VNN7NV04PTR-E |
DATASHEET
| 描述 |
版本 |
大小 |
| VNN7NV04P-E : DS6235: OMNIFET II fully autoprotected Power MOSFET |
3 |
407KB |
