VNS1NV04D OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

技术特性
  • LINEAR CURRENT LIMITATION
  • THERMAL SHUT DOWN
  • SHORT CIRCUIT PROTECTION
  • INTEGRATED CLAMP
  • LOW CURRENT DRAWN FROM INPUT PIN
  • DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
  • ESD PROTECTION
  • DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
  • COMPATIBLE WITH STANDARD POWER MOSFET
功能框图
VNS1NV04D 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
VNS1NV04D-E NRND     SO-8 Tube   VNS1NV04D-E
VNS1NV04D Active 0.779   SO-8 Tube   VNS1NV04D
VNS1NV04DTR-E NRND     SO-8 Tape And Reel   VNS1NV04DTR-E
VNS1NV04D13TR Active 0.779   SO-8 Tape And Reel   VNS1NV04D13TR
DATASHEET
描述 版本 大小
VNS1NV04D : DS2072: “Omnifet II”: fully autoprotected Power MOSFET 3 247KB