VNS3NV04D-E OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
技术特性
- Linear current limitation
- Thermal shut down
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- Esd protection
- Direct access to the gate of the power mosfet (analog driving)
- Compatible with standard power mosfet
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功能框图
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VNS3NV04D-E 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| VNS3NV04DTR-E |
Active |
0.868 |
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SO-8 |
Tape And Reel |
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VNS3NV04DTR-E |
| VNS3NV04D-E |
Active |
0.868 |
|
SO-8 |
Tube |
|
VNS3NV04D-E |
DATASHEET
| 描述 |
版本 |
大小 |
| VNS3NV04D-E : OMNIFET II fully autoprotected Power MOSFET |
2 |
363KB |
