VNS3NV04DP-E OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring voltage at the input pin
技术特性
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功能框图 |
VNS3NV04DP-E 订购信息
| 订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
| VNS3NV04DPTR-E | Active | 0.868 | SO-8 | Tape And Reel | VNS3NV04DPTR-E | ||
| VNS3NV04DP-E | Active | 0.868 | SO-8 | Tube | VNS3NV04DP-E |
DATASHEET
| 描述 | 版本 | 大小 |
| VNS3NV04DP-E : OMNIFET II fully autoprotected Power MOSFET | 2 | 363KB |
