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VNV35NV04-E OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin

技术特性 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET

管脚定义图

VNV35NV04-E 订购信息

订购型号	产品状态	美金价格	数量	封装	包装形式	温度范围	材料声明
VNV35NV04TR-E	Active		1000	POWERSO 10	Tape And Reel		VNV35NV04TR-E
VNV35NV04-E	Active		1000	POWERSO 10	Tube		VNV35NV04-E

DATASHEET

描述	版本	大小
VNV35NV04-E :DS9212: OMNIFET II fully autoprotected Power MOSFET	1	524KB