ADG636YRUZ-REEL7: 1pC Charge Injection, 100pA Leakage CMOS Dual SPDT Switch
The ADG636 is a monolithic device, comprising of two independantly selectable CMOS SPDT (Single Pole, Double Throw) switches. Each switch conducts equally well in both directions when on. The ADG636 operates from a dual ±2.7 V to ±5.5 supply, or from a single supply of +2.7 V to +5.5 V.
This switch offers ultra-low charge injection of 1 pC and leakage current of less than 250pA at 85ºC. It offers on-resistance of 85 Ω typ, which is matched to within 6 Ω between channels. The ADG636 also has low power dissipation yet gives high switching speeds. The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
ADG636YRUZ-REEL7 特点
- 1 pC Charge Injection
- ±2.7 V to ±5.5 V Dual Supply
- +2.7 V to +5.5 V Single Supply
- Automotive Temperature Range: –40°C to +125°C
- 100 pA (Max @ 25°C) Leakage Currents
- 85 Ω Typical On Resistance
- Rail-to-Rail Operation
- Fast Switching Times
- Typical Power Consumption (<0.1 µW)
- TTL/CMOS Compatible Inputs
- 14-Lead TSSOP Package
ADG636YRUZ-REEL7 功能框图
| 产品型号 | 产品状态 | 封装 | 引脚 | 温度范围 |
|---|---|---|---|---|
| ADG636YRU | 量产 | 14 ld TSSOP | 14 | 汽车级 |
| ADG636YRU-REEL | 量产 | 14 ld TSSOP | 14 | 汽车级 |
| ADG636YRU-REEL7 | 量产 | 14 ld TSSOP | 14 | 汽车级 |
| ADG636YRUZ | 量产 | 14 ld TSSOP | 14 | 汽车级 |
| ADG636YRUZ-REEL | 量产 | 14 ld TSSOP | 14 | 汽车级 |
| ADG636YRUZ-REEL7 | 量产 | 14 ld TSSOP | 14 | 汽车级 |
ADG636YRUZ-REEL7 应用技术支持与电子电路设计开发资源下载
- ADG636 数据手册DataSheet下载 . pdf
- Analog Devices, Inc.ADI 美国模拟器件公司产品订购手册 .pdf
- ADC模数转换器选型指南 . pdf
