MAT01GHZ: Matched Monolithic Dual Transistor
The MAT-01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride "Triple-Passivation" process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40µV, temperature drift of 0.15µV/°C, and hFE matching of 0.7%.
Very high h is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10nA. The high gain at lower collector current makes the MAT-01 ideal for use in low-power, low-level input stages.
MAT01GHZ 功能框图
| 产品型号 | 产品状态 | 封装 | 引脚 | 温度范围 |
|---|---|---|---|---|
| MAT01AH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT01AHZ | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT01GH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT01GHZ | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT01NBC | 量产 | CHIPS OR DIE | - | 待定 |
MAT01GHZ 应用技术支持与电子电路设计开发资源下载
- MAT01 数据手册DataSheet 下载 . pdf
- ADI 模拟器件公司比较器产品选型指南 . pdf
- Analog Devices, Inc. 美国模拟器件公司产品订购手册 .pdf
