MAT02: Low Noise, Matched Dual Monolithic Transistor
The design of the MAT-02 series of NPN dual monolithic transistors is optimized for very low noise, low drift, and low rBE. Precision Monolithics' exclusive Silicon Nitride "Triple Passivation" process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT-02 is maintained over a wide range of collector current. Exceptional characteristics of the MAT-02 include offset voltage of 50µV max (A/E grades) and 150&$181;V max F grade. Device performance is specified over the full military temperature range as well as at 25°C.
Input protection diodes are provided across the emitter-base junctions to prevent degredation of the device characteristics due to reversed-biased emitter current. The substrate is clamped to the most negative emitter by the parasitic isolation junction created by the protection diodes. This results in complete isolation between the transistors.
The MAT-02 should be used in any application where low noise is priority. The MAT-02 can be used as an input stage to make an amplifier with noise voltage of less than 1.0nV/Hz at 100 HZ. Other applications such as log/anti-log circuits, may use the excellent logging conformity of the MAT-02. Typical bulk resistance is only 0.3 Ohm to 0.4 Ohm. The MAT-02 electrical characteristics approach those of an ideal transistor when operated over a collector current range of 1µA to 10mA. For applications requiring multiple devices see MAT-04 Quad Matched Transistor data sheet.
MAT02 功能框图
| 产品型号 | 产品状态 | 封装 | 引脚 | 温度范围 |
|---|---|---|---|---|
| MAT02EH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT02EHZ | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT02FH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT02FHZ | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
MAT02 应用技术支持与电子电路设计开发资源下载
- MAT02 数据手册DataSheet 下载 . pdf
- ADI 模拟器件公司比较器产品选型指南 . pdf
- Analog Devices, Inc. 美国模拟器件公司产品订购手册 .pdf
