MAT03EHZ: Low Noise, Matched Dual PNP Transistor
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/(root)Hz max @ 1 kHz), high bandwidth (190 MHz typical), and low offset voltage (100 µV max), makes the MAT03 an excellent choice for demanding preamplifier applications. Tight current gain matching (3% max mismatch) and high current gain (100 min), over a wide range of collector current, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 Ohm) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance.
Each transistor is individually tested to data sheet specifications. Device performance is guaranteed at 25°C and over the extended industrial and military temperature ranges. To insure the long-term stability of the matching parameters, internal protection diodes across the base-emitter junction clamp any reverse base-emitter junction potential. This prevents a base-emitter break-down condition which can result in degradation of gain and matching performance due to excessive breakdown current.
MAT03EHZ 功能框图
| 产品型号 | 产品状态 | 封装 | 引脚 | 温度范围 |
|---|---|---|---|---|
| MAT03EH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT03EHZ | 量产 | 6 lead TO-78 | 6 | 工业 |
| MAT03FH | 量产 | ROUND HEADER/METAL CAN | 6 | 工业 |
| MAT03FHZ | 量产 | 6 lead TO-78 | 6 | 工业 |
MAT03EHZ 应用技术支持与电子电路设计开发资源下载
- MAT03 数据手册DataSheet 下载 . pdf
- ADI 模拟器件公司比较器产品选型指南 . pdf
- Analog Devices, Inc. 美国模拟器件公司产品订购手册 .pdf
