AT28BV64B

KeyValue
Operating Voltage (Vcc):2.7 to 3.6
Density:64Kb
Organization:8K x 8
Speed:200 ns

High-performance 64K EEPROM offers access times to 200ns with 54mW power dissipation and 2.7V supply voltage. Deselected, CMOS standby current is less than 20μA. It is accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.

Ordering Code 订购信息
订购码封装操作范围载体类型
AT28BV64B-20JUPLCC 32J 32Industrial (A) (-40°C to 85°C)
AT28BV64B-20SUSOIC (300mil) 28S 28Industrial (A) (-40°C to 85°C)
AT28BV64B-20TUTSOP 28T 28Industrial (A) (-40°C to 85°C)
DataSheet 数据手册
Application Note
Brochures and Flyers
Other
Overview
AT28BV64B Complete (文件大小: 393KB, 17 页数, 修订版 K, 更新时间: 07/2014)
Atmel Support for Third Party Memory Devices Programmer Sources (文件大小: 80KB, 3 页数, 修订版 E, 更新时间: 04/2013)
EEPROM Data Protection (8 页数, 更新时间: 10/1998)
Programmer Support for Parallel EEPROMs (文件大小: 201901, 3 页数, 修订版 D, 更新时间: 11/2004)
Software Chip Erase (文件大小: 35231, 4 页数, 更新时间: 10/1998)
Atmel System Peripheral and Memory Products Brochure (文件大小: 478KB, 8 页数, 修订版 D, 更新时间: 12/2012)
Product Selection Guide (文件大小: 4.55 MB, 28 页数, 修订版 11, 更新时间: 01/2016)
Standard Microcircuit Drawings Product Offering (24 页数, 更新时间: 06/1998)
Parallel EEPROM Die Products (文件大小: 114KB, 4 页数, 修订版 G, 更新时间: 07/2014)