特点- 低噪声系数
- 高功率开关设计
- GaAs E-pHEMT 技术
- 轻度失真硅 PIN 二极管技术
- 至少符合 MSL2a 要求并且无铅
Applications- 用于 TD-SCDMA 和 TD-LTE 基站前端射频应用的高功率开关 LNA 模块
| | Specification | Value |
|---|
| Lifecycle | Not Recommended for New Design | | RoHS6 Compliant | Y | | Distrib. Inventory | No | | Samples Available | No | | Max Qty of Samples | | | RF Freq (GHz) | | | IF Freq (GHz) | | | Conversion Gain (dB) | | | LO/RF Isol. (dB) | | | IIP3 (dBm) | | | Frequency (GHz) | 1.88-2.025 | | Bias Condition (V@mA) | 5V@227.7mA | | NF (dB) | 0.85 | | Gain (dB) | 39 | | P1dB (dBm) | 23.5(OP1dB) | | OIP3 (dBm) | 36.5 | | Package | SMT 8x8 | | IP1dB (dBm) | |
|
