TSHG6200 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero _ BDTIC 中国领先电子元器件代理商

TSHG6200 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

TSHG6200

技术特性

Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5

Datasheet

TSHG6200

3D Models (*.zip)

Opto 3D Models - Opto 3D Models

Opto 3D Models 81321

TSHG6200 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero 81078

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