IRFI510G, SiHFI510G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
Application Notes
General Information
RC Thermal Models
Reliability Data
IRFI510G, SiHFI510G 90178
Device Application Note AN1005 91051
General Information 91155
IRFI510G_RC, SiHFI510G_RC 90178
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI510G, SiHFI510G Power MOSFET 90178