IRFI9530G, SiHFI9530G Power MOSFET

技术特性
  • Isolated package
  • High voltage isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to lead creepage distance = 4.8 mm
Datasheet
General Information
RC Thermal Models
Reliability Data
IRFI9530G, SiHFI9530G 91163
General Information 91155
IRFI9530G_RC, SiHFI9530G_RC 91163
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI9530G, SiHFI9530G Power MOSFET 91163