IRFI9Z14G, SiHFI9Z14G Power MOSFET

技术特性
  • Isolated Package
  • High Voltage Isolation = 2.5 kVRMS (t = 60 s;     f = 60 Hz)
  • Sink to Lead Creepage Distance = 4.8 mm
Datasheet
General Information
RC Thermal Models
Reliability Data
IRFI9Z14G, SiHFI9Z14G 91170
General Information 91155
IRFI9Z14G_RC, SiHFI9Z14G_RC 91170
Package Reliability 91155
Silicon Technology Reliability 63402
IRFI9Z14G, SiHFI9Z14G Power MOSFET 91170