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VISHAY 威世
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MOSFET
> IRFS11N50A, SiHFS11N50A
IRFS11N50A, SiHFS11N50A Power MOSFET
技术特性
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage and Current
Datasheet
IRFS11N50A, SiHFS11N50A
Application Notes
Device Application Note AN1005
- Power MOSFET Avalanche Design Guidelines
General Information
General Information
- Useful Web Links
Package Drawings
Package Information
- TO-263AB (High Voltage)
Pad Guidelines
PAD Pattern
- D2PAK
RC Thermal Models
IRFS11N50A_RC, SiHFS11N50A_RC
- R-C Thermal Model Parameters
Reliability Data
Package Reliability
- Environmental and Package Testing Data for D2PAK (TO-263) (HVM)
Silicon Technology Reliability
- N-Channel Accelerated Operating Life Test Result
Tape Info
Device Orientation
- TRL Device Orientation for TO-263
Device Orientation
- TRR Device Orientation for TO-263
IRFS11N50A, SiHFS11N50A
91286
Device Application Note AN1005
91051
General Information
91155
Package Information
91052
PAD Pattern
68668
IRFS11N50A_RC, SiHFS11N50A_RC
91286
Package Reliability
91302
Silicon Technology Reliability
63402
Device Orientation
91052
IRFS11N50A, SiHFS11N50A Power MOSFET
91286
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