HMC442-Die 中等功率放大器芯片,17.5 - 25.5 GHz

HMC442是一款高效的GaAs PHEMT MMIC中等功率放大器,工作频率范围为17.5至25.5 GHz。 HMC442提供15 dB增益,饱和功率为+23 dBm,电源电压为+5V (25% PAE)。 由于尺寸较小,该放大器芯片可轻松集成到多芯片模块(MCM)中。 所有数据均采用50 Ω测试夹具中的芯片测得,该夹具通过直径为0.025mm (1 mil)、最小长度为0.31mm (12 mils)的焊线连接。

Applications
  • 点对点无线电
  • 点对多点无线电
  • VSAT
产品特点和性能优势
  • 饱和功率: +23 dBm (25% PAE)
  • 增益: 15 dB
  • 电源电压: +5V
  • 50 Ω匹配输入/输出
  • 裸片尺寸: 1.03 x 1.13 x 0.1 mm
射频和微波
S参数
数据手册
文档备注
HMC442 Die Data SheetPDF 661.46 K
应用笔记
文档备注
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0)PDF 804.11 K
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
MMIC Amplifier Biasing Procedure Application NotePDF 435.1 K
Broadband Biasing of Amplifiers General Application NotePDF 433.77 K
Thermal Management for Surface Mount Components General Application NotePDF 189.99 K
订购信息
产品型号封装包装数量温度范围美金报价 100-499美金报价 1000+RoHS
HMC442 量产CHIPS OR DIEOTH 50-55 至 85至23.9614.48Y
HMC442-SX 量产CHIPS OR DIEOTH 2-55 至 85至00Y
参考资料
HMC442 Die Data Sheet hmc442-die
HMC442 Die S-Parameters hmc442-die
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e
Broadband Biasing of Amplifiers General Application Note hmc1049lp5e
Thermal Management for Surface Mount Components General Application Note hmc1049lp5e
Semiconductor Qualification Test Report: PHEMT-F (QTR: 2013-00269) hmc383lc4