HMC442LC3B 中等功率放大器，采用SMT封装，17.5 - 25.5 GHz

符合RoHS标准的3x3 mm SMT封装

应用
  • 点对点无线电
  • 点对多点无线电
  • HMC混频器LO驱动器
  • 军用EW和ECM
产品特点和性能优势
  • 增益： 13 dB
  • 饱和功率： +23 dBm (26% PAE)
  • 电源电压： +5V
  • 50 Ω匹配输入/输出
  • 符合RoHS标准的3x3 mm SMT封装
射频和微波
S参数
数据手册
文档备注
HMC442LC3B Data SheetPDF 649.09 K
应用笔记
文档备注
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0)PDF 804.11 K
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
MMIC Amplifier Biasing Procedure Application NotePDF 435.1 K
Broadband Biasing of Amplifiers General Application NotePDF 433.77 K
Thermal Management for Surface Mount Components General Application NotePDF 189.99 K
订购信息
产品型号封装包装数量温度范围美金报价 100-499美金报价 1000+RoHS
HMC442LC3B 量产12 ld LCC (3x3mm w/1.5mm EP)OTH 50-55 至 85至42.0232.71Y
HMC442LC3BTR 量产12 ld LCC (3x3mm w/1.5mm EP)REEL 100-55 至 85至42.0232.71Y
HMC442LC3BTR-R5 量产12 ld LCC (3x3mm w/1.5mm EP)REEL 500-55 至 85至42.0232.71Y
评估板
产品型号描述美金报价RoHS
109712-HMC442LC3BEvaluation Board - HMC442LC3B Evaluation PCB521.84Y
参考资料
HMC442LC3B Data Sheet hmc442lc3b
HMC442LC3B S-Parameters hmc442lc3b
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120
MMIC Amplifier Biasing Procedure Application Note hmc1049lp5e
Broadband Biasing of Amplifiers General Application Note hmc1049lp5e
Thermal Management for Surface Mount Components General Application Note hmc1049lp5e
Semiconductor Qualification Test Report: PHEMT-F (QTR: 2013-00269) hmc383lc4
Package/Assembly Qualification Test Report: LC3, LC3B, LC3C (QTR: 2014-00376... hmc344
LP3, LC3, LC3B Tape and Reel Outline Dimensions hmc344
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