HMC8402-DIE 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier

The HMC8402 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier which operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, 2 dB noise figure, 26 dBm output IP3, and 21.5 dBm of output power at 1 dB gain compression while requiring 68 mA from a 7 V supply. The HMC8402 is self biased with only a single positive supply needed to achieve a drain current IDQ of 68 mA.

The HMC8402 amplifier input/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military and space
Telecommunications infrastructure
Fiber optics

产品特点和性能优势

Output power for 1 dB compression (P1dB): 21.5 dBm typical

Saturated output power (PSAT): 22 dBm typical

Gain: 13.5 dB typical

Noise figure: 2 dB

Output third-order intercept (IP3): 26 dBm typical

Supply voltage: 7 V at 68 mA

50 Ω matched input/output

Die size: 2.7 mm × 1.35 mm × 0.05 mm

射频和微波

低噪声放大器

S参数

HMC8402 S-Parameters .ZIP

数据手册

文档	备注
HMC8402: 2 GHz to 30 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet (Rev. 0)	PDF 393.12 K

应用笔记

文档	备注
AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0)	PDF 804.11 K
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K