特点- 低噪声指数
- 高线性
- GaAs E-pHEMT 技术
- 低成本小尺寸封装：2.0 x 2.0 x 0.75 毫米3
- 产品规格整齐划一
- 可选择卷带式封装
Applications相关产品 | | Specification | Value |
|---|
| Lifecycle | Limited Release | | RoHS6 Compliant | Y | | Distrib. Inventory | No | | Samples Available | Yes | | Max Qty of Samples | 5 | | RF Freq (GHz) | | | IF Freq (GHz) | | | Conversion Gain (dB) | | | LO/RF Isol. (dB) | | | IIP3 (dBm) | | | Frequency (GHz) | 0.45-2 | | Bias Condition (V@mA) | 5V@40mA | | NF (dB) | 0.56 | | Gain (dB) | 17.8 | | P1dB (dBm) | 21.5(OP1dB) | | OIP3 (dBm) | 32.8 | | Package | QFN 2x2 | | IP1dB (dBm) | |
|
