DMHC10H170SFJ：H 桥 MOSFET
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Type | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDSA +25ºC (A) | PDW +25ºC (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | CISS Typ (pF) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMHC10H170SFJ | DMHC10H170SFJ.pdf | DMHC10H170SFJ | Yes | Yes | 2 x N 2 x P | No | 100 | 20 | -2.3 2.9 | 2 | 160 250 | 200 300 | 1167 1239 | 17.5 9.7 |
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- High-Efficiency Bridge Rectifiers
Features
- Low On-Resistance
- Low Input Capacitance
订购型号
- DMHC10H170SFJ-13
V-DFN5045-12
- DMHC10H170SFJ.pdf DMHC10H170SFJ
