DMN6069SFG：N 通道 31V - 99V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 5V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN6069SFG | DMN6069SFG.pdf | DMN6069SFG | Yes | Yes | N | No | 60 | 20 | 5.6 | - | 2.4 | - | 50 | 63 | - | - | 3 | 740 | 30 | 14 | - | 6.4 |
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Application
- Backlighting
- Power Management Functions
- DC-DC Converters
- STB
- LCD-TV
- Coffee Machines
- Monitors
- Communications
Features
- Low RDS(ON) Ensures On-State Losses are Minimized
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Emaller End Product
订购型号
- DMN6069SFG-7
PowerDI3333-8
- DMN6069SFG.pdf DMN6069SFG
