FGH75T65SQDTL4: 650 V, 75 A Field Stop Trench IGBT

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential

特性

• Maximum Junction Temperature: T_J = 175°C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V_CE(sat) = 1.6 V (Typ.) @ I_C = 75 A
• 100% of the Parts tested for I_LM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant