BFP640F

NPN Silicon Germanium RF Transistor

ParametricBFP640F
VCEO  max4.0V
IC  max50.0mA
NF0.65dB
Gmax23.0dB
OIP327.5dBm
OP1dB13.5dBm
PackageTSFP-4
Sales Product NameBFP640F
OPNBFP640FH6327XTSA1
Product Statusactive and preferred
Package NamePG-TSFP-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • High gain low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz
  • High maximum stable gain:Gms = 23 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 70 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101
Data Sheet
TitleSizeDateVersion
BFP640F,EN1.4 MB13 三月 201502_00
Application Notes
TitleSizeDateVersion
AN082 - A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using the Silicon-Germanium BFP640 Transistor1.2 MB08 十二月 2009
AN124 - Low Noise Amplifier (LNA) for 2.3 to 2.5 GHz Application using the Silicon-Germanium BFP640F Transistor in TSFP-4 package. Rev. B.1.3 MB08 十二月 2009
AN125 - 2.6 GHz, 1.8 Volt Low Noise Amplifier (LNA) for Satellite Digital Multimedia Broadcasting (DMB-H) Applications using the Silicon-Germanium BFP640F Transistor in TSFP-4 Package.1 MB08 十二月 2009
AN126 - BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier (LNA), with reduced external component count and reduced gain at 2.4 GHz656 KB11 二月 2010
AN127 - 1.8 V Ultra Low Cost LNA for GPS, PHS, UMTS and 2.4 GHz ISM using BFP640F1.2 MB08 十二月 2009
AN128 - Reduced Parts Count LNA for 1.4 - 2.0 GHz using the SiGe Tranisistor BFP640F1 MB08 十二月 2009
AN129 - Low Noise Amplifier for 2.3 to 2.5 GHz Applications using the SiGe BFP640F Transistor671 KB29 十一月 2007
AN136 - Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Transistor983 KB08 十二月 2009
AN179 - High Gain, High Third Order Intercept 1575 MHz Global Positioning System (GPS) Low Noise Amplifier using the Infineon BFP640F SiGe:C Low Noise RF Transistor870 KB13 十月 201101_02
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-03-17_02-23-29_MA000895776_PG-TSFP-4-1.pdf；EN27 KB17 三月 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Mentor - v1.0；EN2 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Altium - v1.0；EN459 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Eagle - v1.0；EN2 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Cadence - v1.0；EN11 KB13 五月 201601_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 十二月 201502_00
Simulation Data
TitleSizeDateVersion
BFP640F652 KB16 五月 2013
Package Data
TitleSizeDateVersion
PG-TSFP-4-1 | BFP640FH6327XTSA1；EN488 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Mentor - v1.0；EN2 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Altium - v1.0；EN459 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Eagle - v1.0；EN2 KB13 五月 201601_00
PCB Footprints and Symbols - BFP640F - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz BFP640F - Cadence - v1.0；EN11 KB13 五月 201601_00
EN BFP640F
AN082 - A Low-Cost, Two-Stage Low Noise Amplifier for 5 - 6 GHz Applications Using the Silicon-Germanium BFP640 Transistor BFP640F
AN124 - Low Noise Amplifier (LNA) for 2.3 to 2.5 GHz Application using the Silicon-Germanium BFP640F Transistor in TSFP-4 packag BFP640F
AN125 - 2.6 GHz, 1.8 Volt Low Noise Amplifier (LNA) for Satellite Digital Multimedia Broadcasting (DMB-H) Applications using the BFP640F
AN126 - BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier (LNA), with reduced external BFP640F
AN127 - 1.8 V Ultra Low Cost LNA for GPS, PHS, UMTS and 2.4 GHz ISM using BFP640F BFP640F
AN128 - Reduced Parts Count LNA for 1.4 - 2.0 GHz using the SiGe Tranisistor BFP640F BFP640F
AN129 - Low Noise Amplifier for 2.3 to 2.5 GHz Applications using the SiGe BFP640F Transistor BFP640F
AN136 - Low Cost, 3 Volt, +14 dBm 2.33 GHz SDARS Active Antenna 2nd Stage Low Noise Amplifier using the Infineon BFP640 SiGe Tra BFP640F
AN179 - High Gain, High Third Order Intercept 1575 MHz Global Positioning System (GPS) Low Noise Amplifier using the Infineon BF BFP640F
EN BFP640F
EN BFQ790
BFP640F BFP640F
EN BFP640F
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