BFP720ESD

The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

As Low Noise Amplifier (LNA) in:

ParametricBFP720ESD
VCEO  max4.2V
IC  max25.0mA
NF0.6dB
Gmax27.0dB
OIP322.0dBm
OP1dB6.5dBm
PackageSOT343
Sales Product NameBFP720ESD
OPNBFP720ESDH6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 5 mA
  • 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 19.5 dB at 5.5 GHz, 15 mA
  • 22 dBm OIP3 typical at 5.5 GHz, 15 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
Target Applications:
  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
  • 3G/4G UMTS/LTE mobile phone applications
  • Multimedia applications such as mobile/portable TV, CATV, FM Radio
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCO's and buffer amplifier.
Data Sheet
TitleSizeDateVersion
Infineon-BFP720ESD-DS-v01_01-EN,EN1.5 MB15 十月 201201_01
Product Brief
TitleSizeDateVersion
Infineon-RF Transistors 7th Generation-PB-v01_00-EN；EN299 KB15 六月 201601_01
Infineon-RF Transistors 7th Generation-PB-v01_00-CN；CN580 KB15 五月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-01-22_02-49-38_MA000796166_PG-SOT343-4-2.pdf；EN27 KB22 一月 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
PCB Footprints & Symbols - BFP720ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN241 KB07 一月 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 十二月 201502_00
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 十月 201502_00
Simulation Data
TitleSizeDateVersion
BFP720ESD Simulation Data157 KB30 五月 2014
Package Data
TitleSizeDateVersion
PG-SOT343-4-2 | BFP720ESDH6327XTSA1；EN576 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
PCB Footprints & Symbols - BFP720ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN241 KB07 一月 201502_00
EN BFP720ESD
EN BFR740L3RH
CN BFP760
EN BFP720ESD
EN BFQ790
EN BFP780
BFP720ESD Simulation Data BFP720ESD
EN BFP720ESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
EN BFP720ESD
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