BFP720F

The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

ParametricBFP720F
VCEO  max4.0V
IC  max20.0mA
NF0.5dB
Gmax26.0dB
OIP320.5dBm
OP1dB6.0dBm
PackageTSFP-4
Sales Product NameBFP720F
OPNBFP720FH6327XTSA1
Product Statusactive and preferred
Package NamePG-TSFP-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • High performance general purpose wideband LNA transistor
  • 150 GHz fT-Silicon Germanium Carbon technology
  • Enables Best-In-Class performance for wireless applications due to high dynamic range
  • Transistor geometry optimized for low-current applications
  • Operation voltage: 1.0 V to 4.0 V
  • Very high gain at high frequencies and low current consumption
  • 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
  • 15 dB maximum available gain at 10 GHz and only 13 mA
  • Ultra low noise figure from latest SiGe:C technology
  • 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz
  • High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and low current consumption of 13 mA
  • Pb-free (RoHS compliant) package
Target Applications:
  • FM Radio
  • Mobile TV
  • RKE
  • AMR
  • Cellular
  • ZigBee
  • GPS
  • WiMAX
  • SDARs
  • Bluetooth
  • WiFi
  • Cordless phone
  • UMTS
  • WLAN
  • UWB
  • LNB
Data Sheet
TitleSizeDateVersion
BFP720F,EN1.5 MB25 十月 201201_01
Product Brief
TitleSizeDateVersion
Infineon-RF Transistors 7th Generation-PB-v01_00-CN；CN580 KB15 五月 201601_01
Infineon-RF Transistors 7th Generation-PB-v01_00-EN；EN299 KB15 六月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-03-17_03-02-55_MA000895790_PG-TSFP-4-1.pdf；EN27 KB17 三月 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 十月 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 十二月 201502_00
Simulation Data
TitleSizeDateVersion
Infineon-Infineon_Simulation_Data_BFP720F-SD-v01_00-EN；EN790 KB08 十二月 201401_00
Package Data
TitleSizeDateVersion
PG-TSFP-4-1 | BFP720FH6327XTSA1；EN491 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
EN BFP720F
CN BFP760
EN BFR740L3RH
EN BFP720F
EN BFP780
EN BFQ790
EN BFP720F
EN BFP720F
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
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