BFP840ESD

The BFx840xESD product family is a series of discrete hetero-junction bipolar transistors (HBT) specifically designed for high performance 5 GHz band low noise amplifier (LNA) solutions for Wi-Fi connectivity applications.

ParametricBFP840ESD
VCEO  max2.25V
IC  max35.0mA
NF0.6dB
Gmax27.0dB
OIP321.0dBm
OP1dB4.5dBm
Sales Product NameBFP840ESD
OPNBFP840ESDH6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • Best-in-class RF performance
  • High transition frequency f T = 80 GHz
  • Achieves highest gain (18dB) and best-in-class noise figure level (0.95dB) with only 8 external passives
  • Low voltage supply capability e.g. VCC = 1.2 V and 1.8 V
  • 1.5 kV HBM ESD hardness
  • High maximum RF input power
  • Low power consumption, ideal for mobile applications
  • Available in standard, flat lead and ultra low height packages
  • Inherently matched in the 5 GHz band
Benefits:
  • Abundant Distribution channels and sales offices worldwide
  • Circuit layout/design support
  • Modelling competence: SPICE models and Microwave Office / ADS design kits
Target Applications:
  • 5-6 GHz low noise amplifier (LNA)
  • Wi-Fi 802.11 a/n/ac standards
  • Wi-Fi access point (AP)
  • Routers
  • Wi-Fi modules
Data Sheet
TitleSizeDateVersion
BFP840ESD,EN1.4 MB28 三月 201301_02
Application Notes
TitleSizeDateVersion
AN316 - Low Noise Amplifier for 5 to 6 GHz WLAN Application using BFP840ESD831 KB20 五月 201301_00
AN317 - Low Noise Amplifier for 5 to 6 GHz WLAN Application using BFP840ESD with 2.4 GHz Rejection665 KB22 五月 201301_00
AN309 - BFP840ESD Ultra Low Noise RF Transistor in Dual -Band 2.4-2.5 GHz & 5-6 GHz WLAN Application690 KB30 五月 201401_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CN；CN362 KB25 四月 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN；EN289 KB01 四月 201601_00
Article
TitleSizeDateVersion
Next-Generation RF Transistors with Advanced Technology Boost Receiver251 KB02 四月 2013
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-02-27_11-29-47_MA000976108_PG-SOT343-4-2.pdf；EN27 KB31 十月 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
PCB Footprints & Symbols - BFP840ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN241 KB07 一月 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
infineon - BFP840ESD - Ultra Low-Noise SiGeC Transistors for use up to 12 GHz - SimModel with symbol and footprint - AWR MWO - v1.0；EN2.9 MB13 五月 201601_00
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN；EN940 KB26 十月 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 十二月 201502_00
Simulation Data
TitleSizeDateVersion
BFP840ESD609 KB15 六月 2012
Package Data
TitleSizeDateVersion
PG-SOT343-4-2 | BFP840ESDH6327XTSA1；EN580 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
PCB Footprints & Symbols - BFP840ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip；EN241 KB07 一月 201502_00
EN BFP840ESD
AN316 - Low Noise Amplifier for 5 to 6 GHz WLAN Application using BFP840ESD BFP840ESD
AN317 - Low Noise Amplifier for 5 to 6 GHz WLAN Application using BFP840ESD with 2.4 GHz Rejection BFP840ESD
AN309 - BFP840ESD Ultra Low Noise RF Transistor in Dual -Band 2.4-2.5 GHz & 5-6 GHz WLAN Application BFP840ESD
CN BFR840L3RHESD
EN BFR840L3RHESD
Next-Generation RF Transistors with Advanced Technology Boost Receiver BFR840L3RHESD
EN BFP840ESD
EN BFP780
EN BFQ790
BFP840ESD BFP840ESD
EN BFP840ESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH
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