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BFP843F

The BFP843F is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board (e.g. AppNote AN300).

• Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology • High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness • Unique combination of high RF performance, robustness and ease of application circuit design • Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA • High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA • OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) • Low power consumption, ideal for mobile applications • Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

As Low Noise Amplifier (LNA) in

Parametric BFP843F VCEO  max 2.25V IC  max 55.0mA NF 0.9dB Gmax 23.5dB OIP3 23.5dBm Package TSFP-4-1 Sales Product Name BFP843F OPN BFP843FH6327XTSA1 Product Status active and preferred Package Name PG-TSFP-4 Completely lead free yes Halogen free yes RoHS compliant yes Packing Size 3000 Packing Type TAPE & REEL Moisture Level 1

Summary of Features: Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness Unique combination of high RF performance, robustness and ease of application circuit design Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Low power consumption, ideal for mobile applications Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available Target Applications: Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA) Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz ISM bands up to 10 GHz Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p

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