BFR840L3RHESD

The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules.

As Low Noise Amplifier (LNA) in:

ParametricBFR840L3RHESD
VCEO  max2.25V
IC  max35.0mA
NF0.5dB
Gmax26.5dB
OIP317.0dBm
OP1dB4.0dBm
Sales Product NameBFR840L3RHESD
OPNBFR840L3RHESDE6327XTSA1
Product Statusactive and preferred
Package NamePG-TSLP-3
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size15000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Robust ultra low noise amplifier based on Infineon´s reliable high volume SiGe:C bipolar technology
  • Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness
  • Very high transition frequency fT = 75 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 5.5 GHz, 1.1 dB at 12 GHz, 1.8 V, 5 mA
  • High gain |S21|2 = 19 dB at 5.5 GHz, 1.8 V, 10 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
  • Low power consumption, ideal for mobile applications
  • Pb free (RoHS compliant) and halogen free very small thin leadless package (package height 0.31 mm, ideal for modules)
Target Applications:
  • Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
  • Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass)
  • and C-band LNB (1st and 2nd stage LNA)
  • Ku-band LNB front-end (2nd stage or 3rd stage LNA and active mixer)
  • Ka-band oscillators (DROs)
Data Sheet
TitleSizeDateVersion
BFR840L3RHESD,EN1.5 MB09 四月 201301_02
Application Notes
TitleSizeDateVersion
AN292 - BFR840L3RHESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count Wideband / Dual Band 2.4 – 5.8 GHz WLAN LNA Application924 KB19 二月 201301_00
AN281 - BFR840L3RHESD_Low-Part-Count@5-6GHz_WLAN740 KB23 三月 201201_00
AN290613 KB10 六月 201201_00
AN339 - BFR840L3RHESD Low Noise Amplifier for 2.4 GHz - 2.5 GHz Wireless LAN Application836 KB06 八月 201401_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CNCN362 KB25 四月 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-ENEN289 KB01 四月 201601_00
Article
TitleSizeDateVersion
Next-Generation RF Transistors with Advanced Technology Boost Receiver251 KB02 四月 2013
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_10-57-18_MA000997852_PG-TSLP-3-9.pdf23 KB31 十月 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints and Symbols - BFR840L3RHESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zipEN243 KB08 五月 201501_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-ENEN940 KB26 十月 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-ENEN21.4 MB11 十二月 201502_00
Infineon-AN281-BFR840L3RHESD-AWR-MWO-Apllication-Example-SM-v01_00-ENEN219 KB26 十月 201501_00
Simulation Data
TitleSizeDateVersion
BFR840L3RHESD461 KB25 六月 2012
Package Data
TitleSizeDateVersion
PG-TSLP-3-9 | BFR840L3RHESDE6327XTSA1EN522 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 十月 201301_00
PCB Footprints and Symbols - BFR840L3RHESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zipEN243 KB08 五月 201501_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 十月 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 十月 201301_00
EN BFR840L3RHESD
AN292 - BFR840L3RHESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count Wideband / Dual Band 2.4 – 5.8 GHz WLAN LNA Applic BFR840L3RHESD
AN281 - BFR840L3RHESD_Low-Part-Count@5-6GHz_WLAN BFR840L3RHESD
AN290 BFR840L3RHESD
AN339 - BFR840L3RHESD Low Noise Amplifier for 2.4 GHz - 2.5 GHz Wireless LAN Application BFR840L3RHESD
CN BFR840L3RHESD
EN BFR840L3RHESD
Next-Generation RF Transistors with Advanced Technology Boost Receiver BFR840L3RHESD
MCDS_2013-08-29_10-57-18_MA000997852_PG-TSLP-3-9.pdf BFR840L3RHESD
EN BFP780
EN BFQ790
EN BFR840L3RHESD
BFR840L3RHESD BFR840L3RHESD
EN BFR840L3RHESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH