BFR843EL3

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

As Low Noise Amplifier (LNA) in

ParametricBFR843EL3
VCEO  max2.25V
IC  max55.0mA
NF0.95dB
Gmax24.0dB
OIP321.0dBm
PackageTSLP-3-10
Frequency-
Sales Product NameBFR843EL3
OPNBFR843EL3E6327XTSA1
Product Statusactive and preferred
Package NamePG-TSLP-3
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size15000
Packing TypeTAPE & REEL
Summary of Features:
  • Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
  • High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
  • Unique combination of high RF performance, robustness and ease of application circuit design
  • Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.05 dB at 5.5 GHz, 1.8 V, 8 mA
  • High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA
  • OIP3 = 21.5 dBm at 2.4 GHz and 20.5 dBm at 5.5 GHz, 1.8 V, 20 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
  • Low power consumption, ideal for mobile applications
  • Pb-free (RoHS compliant) and halogen free very small thin leadless plastic package
  • Qualification report according to AEC-Q101 available
Target Applications:
  • Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
  • Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA)
  • Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
  • ISM bands up to 10 GHz
  • Dedicated short range communication (DSRC) systems: WLAN IEEE802.11p
Data Sheet
TitleSizeDateVersion
BFR843EL3 - Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor1.5 MB15 九月 201401_00
Application Notes
TitleSizeDateVersion
AN307 - BFR843EL3 SiGe:C Ultra Low Noise RF Transistor in Dual-Band 2.4 - 2.5 GHz & 5 - 6 GHz WiFi / WLAN Application637 KB12 七月 201301_00
AN328 - BFR843EL3 SiGe:C Low Noise RF Transistor in broad Band LTE (700 - 3800 MHz) LNA Application935 KB02 八月 201301_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CN；CN362 KB25 四月 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN；EN289 KB01 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v2.0.zip；EN11 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v2.0.zip；EN2 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip；EN243 KB08 五月 201501_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v2.0.zip；EN2 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v2.0.zip；EN461 KB10 二月 201601_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN；EN21.4 MB11 十二月 201502_00
Infineon-AN307-BFR843EL3-AWR-MWO-Apllication-Example-SM-v01_00-EN；EN132 KB26 十月 201501_00
Simulation Data
TitleSizeDateVersion
BFR843EL3_spar12GHz_noise10GHz_spice12GHz459 KB26 六月 2014
Package Data
TitleSizeDateVersion
PG-TSLP-3-10 | BFR843EL3E6327XTSA1；EN524 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v2.0.zip；EN11 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v2.0.zip；EN2 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip；EN243 KB08 五月 201501_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v2.0.zip；EN2 KB10 二月 201601_00
PCB Footprints and Symbols - BFR843EL3 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v2.0.zip；EN461 KB10 二月 201601_00
BFR843EL3 - Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor BFR843EL3
AN307 - BFR843EL3 SiGe:C Ultra Low Noise RF Transistor in Dual-Band 2.4 - 2.5 GHz & 5 - 6 GHz WiFi / WLAN Application BFR843EL3
AN328 - BFR843EL3 SiGe:C Low Noise RF Transistor in broad Band LTE (700 - 3800 MHz) LNA Application BFR843EL3
CN BFR840L3RHESD
EN BFR840L3RHESD
EN BFQ790
EN BFR843EL3
BFR843EL3_spar12GHz_noise10GHz_spice12GHz BFR843EL3
EN BFR843EL3
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