| Parametric | BFY450 (P) |
|---|
| VCEO
max | 4.5V |
|---|
| IC
max | 100.0mA |
|---|
| Ptot
max | 450.0mW |
|---|
| fT | 22.0GHz |
|---|
| RthJS
max | 145.0K/W |
|---|
| Sales Product Name | BFY450 (P) |
|---|
| OPN | |
|---|
| Product Status | active and preferred |
|---|
| Package Name | -- |
|---|
| Completely lead free | no |
|---|
| Halogen free | no |
|---|
| RoHS compliant | no |
|---|
| Packing Size | 1 |
|---|
| Packing Type | |
|---|
| |
|---|
| Summary of Features:- HiRel Discrete and Microwave Semiconductor
- For Medium Power Amplifiers
- Compression Point P-1dB =19dBm 1.8 GHz
- Max. Available Gain Gma = 16dB at 1.8 GHz
- Hermetically sealed microwave package
- Transition Frequency fT = 20 GHz
- SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
- Type Variant No. 03
Target Applications:- Quality level for Engineering Models
 |
