| Parametric | BFY640-04 (P) |
|---|
| VCEO
max | 4.0V |
|---|
| IC
max | 50.0mA |
|---|
| Ptot
max | 200.0mW |
|---|
| fT | 40.0GHz |
|---|
| RthJS
max | 325.0K/W |
|---|
| Sales Product Name | BFY640-04 (P) |
|---|
| OPN | BFY64004PZZZA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | T-SAMPLE1-8 |
|---|
| Completely lead free | no |
|---|
| Halogen free | no |
|---|
| RoHS compliant | no |
|---|
| Packing Size | |
|---|
| Packing Type | |
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| |
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| Summary of Features:- HiRel Discrete and Microwave Semiconductor
- High gain low noise RF transistor
- High maximum stable gain: Gms 24dB at 1.8 GHz
- Noise figure F = 0.8 dB at 1.8 GHz
- Noise figure F = 1.1 dB at 6 GHz
- Hermetically sealed microwave package
Target Applications:- Quality level for Engineering Models
 |
