BFY650B-11 (P)

HiRel Microwave Transistor

ParametricBFY650B-11 (P)
VCEO  max4.0V
IC  max150.0mA
Ptot  max600.0mW
fT40.0GHz
RthJS  max150.0K/W
Sales Product NameBFY650B-11 (P)
OPN
Product Statusactive and preferred
Package Name--
Completely lead freeno
Halogen freeno
RoHS compliantyes
Packing Size1
Packing TypeVACUUM RELEASED TRAY
Summary of Features:
  • HiRel Discrete and Microwave Semiconductor
  • For high power amplifiers
  • Ideal for low phase noise oscilators
  • Maximum available gain: Gma = 19 dB at 1.8 GHz
  • Noise figure F = 0.9 dB at 1.8 GHz
  • Hermetically sealed microwave package
Target Applications:
  • Quality level for Engineering Models
Product Brief
TitleSizeDateVersion
BFY650B175 KB05 十二月 2012
BFY650B BFY650B-11+P