BGS15M2A12
The BGS15M2A12 RF MOS switch is specifically designed for LTE and WCDMA diversity applications. This SP5T offers low insertion loss and low harmonic generation.
The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.1 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS15M2A12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.9mm2 and a maximum height of 0.65 mm.
| BGS15M2A12 | |
|---|
| BGS15M2A12E6327XTSA1 | |
|---|
| active and preferred | |
|---|
| |
|---|
| PG-ATSLP-12 | |
|---|
| yes | |
|---|
| yes | |
|---|
| yes | |
|---|
| 4500 | |
|---|
| TAPE & REEL | |
|---|
| 1 | |
|---|
| Sales Product Name | BGS15M2A12 |
|---|
| OPN | BGS15M2A12E6327XTSA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-ATSLP-12 |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 4500 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
| Summary of Features:- Suitable for multi-mode LTE / WCDMA diversity Applications
- Ultra-low insertion loss and harmonics generation
- 5 high-linearity, interchangeable RX ports
- 0.1 to 2.7 GHz coverage
- High port-to-port-isolation
- No decoupling capacitors required if no DC applied on RF lines
- Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range
- Software programmable MIPI RFFE USID
- Small form factor 1.1mm x 1.9mm
- No power supply blocking required
- High EMI robustness
- RoHS and WEEE compliant package
Target Applications:- Suitable for multi-mode LTE / WCDMA diversity Applications
- Especially designed for Multi-Band RX Diversity
|
Data Sheet
Package Data
