BGS15M2A12

The BGS15M2A12 RF MOS switch is specifically designed for LTE and WCDMA diversity applications. This SP5T offers low insertion loss and low harmonic generation.

The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.1 to 1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS15M2A12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.9mm2 and a maximum height of 0.65 mm.

BGS15M2A12
BGS15M2A12E6327XTSA1
active and preferred
PG-ATSLP-12
yes
yes
yes
4500
TAPE & REEL
1
Sales Product NameBGS15M2A12
OPNBGS15M2A12E6327XTSA1
Product Statusactive and preferred
Package NamePG-ATSLP-12
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Suitable for multi-mode LTE / WCDMA diversity Applications
  • Ultra-low insertion loss and harmonics generation
  • 5 high-linearity, interchangeable RX ports
  • 0.1 to 2.7 GHz coverage
  • High port-to-port-isolation
  • No decoupling capacitors required if no DC applied on RF lines
  • Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range
  • Software programmable MIPI RFFE USID
  • Small form factor 1.1mm x 1.9mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package
Target Applications:
  • Suitable for multi-mode LTE / WCDMA diversity Applications
  • Especially designed for Multi-Band RX Diversity
Data Sheet
TitleSizeDateVersion
Infineon-BGS15M2A12-DS-v03_00-EN,EN1.3 MB22 二月 201603_00
Package Data
TitleSizeDateVersion
PG-ATSLP-12-5 | BGS15M2A12E6327XTSA1EN368 KB11 四月 201601_00
EN BGS15M2A12
EN BGS15M2A12