| Parametric | BGT70 |
|---|
| Frequency | 71.0-76.0 GHz |
|---|
| Psat
(typ) | 14.0dBm |
|---|
| Rx Gain
(typ) | 20.0dB |
|---|
| NFDSB
(typ) | 8.0dB |
|---|
| ICCRx / Tx | 350/480 mA @ 3.3V |
|---|
| PN
( @100kHZ typ) | -80 dBc/Hz |
|---|
| Power Detector
(-) | Integrated |
|---|
| Temperature Sensor | Integrated |
|---|
| Sales Product Name | BGT70 |
|---|
| OPN | BGT70E6327XTSA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-WFWLB-119 |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1000 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
| Summary of Features:- Developed for telecommunication only
- Support FDD and TDD systems (in full duplex or half-duplex mode)
- Support modulation schemes: QPSK, QAM
- Support small cell backhaul (up to 1000m)
- Support Macrocell backhaul (external PA needed depending on output power requirement)
- Direct conversion I/Q transceiver
- IF bandwidth 1000MHz
- Differential RF/IF interface for lower loss and better isolation
- Integration of VCO (Voltage Controller Oscillator) signal generation
- PNssb (Phase Noise single side band) < -80dBc/Hz @ 100kHz offset
- 10dBm linear output power (sufficient for small cells)
- 7dB NF (Noise Figure)
- Integrated power detection function
- Integrated thermal sensor
- eWLB (embedded Wafer Level Ball Grid Array) packaged device
Benefits:- Packaged solution, easy to use and standard SMT flow formounting on customer system
- Highly integrated RF transceiver requiring no external RF discretes, thereby simplifying the customer design and time-to-market
- Architecture of Direct Conversion Zero IF eases interface to latest modem/BB designs (no external filter)
- A transceiver approach with implemented BIST (B uilt-In S elf-T est)on the chip to enable RF testing at Infineon production
- Family concept (common architecture, package, pinning) simplifies customer designs due to modular approach
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