Parametric | D1131SH65T |
---|
VRRM [V] | 6500.0 |
---|
VR(D) [kV]
(@TC = 25°) | 3.2 |
---|
IFAVM/TC [A/°C]
(@180° el sin) | 1100/85 |
---|
IFSM [A]
(@10ms, Tvj max) | 22000.0 |
---|
VF/IF [V/kA]
(@Tvj max) | 4,2/2,5 |
---|
VT0 [V]
(@Tvj max)
max | 2.19 |
---|
rT [mΩ]
(@Tvj max)
max | 1.364 |
---|
Qr [mAs]
(@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max)
max | 3.5 |
---|
IRM [A]
(@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max)
max | 1200.0 |
---|
RthJC [K/kW]
(@DC)
max | 7.5 |
---|
Tvj [°C]
max | 140.0 |
---|
Clamping force [kn]
min
max | 36.0
52.0 |
---|
Configuration | IGCT/IGBT - Freewheeling Diodes |
---|
Housing | Disc Dia 120mm height 26mm / Ceramic |
---|
VRRM
max | 6500.0V |
---|
I(FSM)
max | 22000.0A |
---|
Sales Product Name | D1131SH65T |
---|
OPN | D1131SH65TXPSA1 |
---|
Product Status | active and preferred |
---|
Package Name | BG-D12026K-1 |
---|
Completely lead free | yes |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 1 |
---|
Packing Type | TRAY |
---|
| |
---|
| Summary of Features:- Full blocking capability 50/60 Hz over a wide temperature range
- High DC blocking stability
- High surge current capability
- High case non-rupture current
- Soft turn-off behavior at high turn-off di/dt
Benefits:- Freewheeling or clamping diode for IGCT / Presspack IGBT
- Low inductive connection to IGCT / Presspack IGBT possible
- Extreme soft switching behavior at low on-state losses
Benefits:- Freewheeling or clamping diode for IGCT / Presspack IGBT
- Low inductive connection to IGCT / Presspack IGBT possible
- Extreme soft switching behavior at low on-state losses
功能框图 |