Parametric | D650S12T |
---|
VRRM [V] | 1200.0 |
---|
IFAVM/TC [A/°C]
(@180° el sin) | 650/96 |
---|
IFSM [A]
(@10ms, Tvj max) | 10100.0 |
---|
∫I2dt [A²s · 103]
(@10ms, Tvj max) | 510.0 |
---|
VF/IF [V/kA]
(@Tvj max) | 2.25/2.7 |
---|
VT0 [V]
(@Tvj max)
max | 1.0 |
---|
rT [mΩ]
(@Tvj max)
max | 0.45 |
---|
IRM [A]
(@IF = IFAVM, di/dt = 50 A/µs)
max | 122.0 |
---|
RthJC [K/kW]
(@180° el sin)
max | 48.0 |
---|
Tvj [°C]
max | 150.0 |
---|
Clamping force [kn]
min
max | 6.0
14.5 |
---|
Housing | Disc dia 58mm height 26mm / Ceramic |
---|
Configuration | Fast Rectifier Diodes |
---|
Sales Product Name | D650S12T |
---|
OPN | D650S12TXPSA1 |
---|
Product Status | active and preferred |
---|
Package Name | BG-D5726K-1 |
---|
Completely lead free | yes |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 1 |
---|
Packing Type | TRAY |
---|
| |
---|
| Summary of Features:- High current
- High blocking voltage
- Light-triggered types available
- Highest robustness
- Highest reliability
- High case non rupture current capability
Summary of Features:- High current
- High blocking voltage
- Light-triggered types available
- Highest robustness
- Highest reliability
- High case non rupture current capability
功能框图 |