IDC51D120T6M

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricIDC51D120T6M
TechnologyEmitter Controlled Diode 4 Medium Power
VDS  max1200.0V
IF  max100.0A
I(FSM)  max200.0A
VF1.7V
IR  max18.0µA
Sales Product NameIDC51D120T6M
OPNIDC51D120T6MX1SA3
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • 1200V Emitter Controlled Diode 4 technology
  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Target Applications:
  • Low/ medium power drives
Data Sheet
TitleSizeDateVersion
IDC51D120T6M,EN56 KB04 二月 201300_09
EN IDC51D120T6M