IDD09SG60C

The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The Generation 3 is based on the same technology platform as Generation 2 with the introduction, at package level, of the so called diffusion soldering.

ParametricIDD09SG60C
Budgetary Price €€/1k2.41
VDC  min600.0V
IF  max9.0A
VF1.8V
QC15.0nC
PackageDPAK (TO-252)
I(FSM)  max49.0A
IR0.7µA
Ptot  max115.0W
Sales Product NameIDD09SG60C
OPNIDD09SG60CXTMA1
Product Statusactive
Package NamePG-TO252-3
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size2500
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Benchmark switching behavior
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
Benefits:
  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI
Target Applications:
  • Server
  • Telecom
  • Solar
  • Lighting
  • PC Power
  • AC-DC
Data Sheet
TitleSizeDateVersion
IDD09SG60C,EN763 KB15 二月 201302_04
Product Brochure
TitleSizeDateVersion
CoolSiC™ technology；EN2.1 MB09 五月 201601_00
Product Overview
TitleSizeDateVersion
Selection Guide 600V 650V CoolSiC™ Schottky Diodes；EN2 MB14 三月 201401_00
Application Notes
TitleSizeDateVersion
Application Note CoolSiC™ Schottky Diodes Design Rules；EN791 KB16 六月 201401_00
Application Note PFC CCM Boost Converter Design Guide；EN2.2 MB19 十二月 201402_00
Product Brief
TitleSizeDateVersion
Product Brief 600V CoolSiC™ Schottky Diodes Generation 3；EN202 KB01 十二月 201201_00
Article
TitleSizeDateVersion
Article 600V 650V 1200V CoolSiC™ Schottky Diodes PEE Magazine；EN1.6 MB01 九月 201201_00
Matching Circuit Topologies and Power Semiconductors for Energy Storage in Photovoltaic Systems；EN376 KB05 九月 2014
Article CoolSiC™ Schottky Diodes Generation 5 Semiconductor Network - Korean；KO1.4 MB10 九月 201401_00
Application Brochure
TitleSizeDateVersion
Solutions for Solar Energy Systems；EN1.9 MB26 六月 201401_00
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016；EN4.7 MB22 二月 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-12-30_05-32-02_MA000809454_PG-TO252-3-311.pdf；EN28 KB30 十二月 201502_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
Simulation Models
TitleSizeDateVersion
Simulation Model SiC Diodes CoolSiC™ PSpice Generation 3 600V IDDxxSG60C IDHxxSG60C；EN8 KB05 六月 201301_00
Package Data
TitleSizeDateVersion
PG-TO252-3-311 | IDD09SG60CXTMA1；EN441 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
EN IDD09SG60C
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KO IDW40G120C5B
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PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0 IDW40G120C5B
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