| Parametric | IGC03R60DE |
|---|
| VCE
max | 600.0V |
|---|
| IC
max | 2.5A |
|---|
| VCE(sat)
max | 2.1V |
|---|
| VGE(th)
min
max | 4.3V
5.7V |
|---|
| Operating Temperature
min
max | -40.0°C
175.0°C |
|---|
| VDS
max | 600.0V |
|---|
| Sales Product Name | IGC03R60DE |
|---|
| OPN | IGC03R60DEX1SA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | -- |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1 |
|---|
| Packing Type | WAFER SAWN |
|---|
| |
|---|
| Summary of Features:- Monolithical diode included
- Optimized V CE(sat) and V F for low conduction losses
- Smooth switching performance leading to low EMI levels
- Very tight parameter distribution
- Operating range of 1 to 20kHz
- Maximum junction temperature 175°C
- Short circuit capability of 5μs
Target Applications: 功能框图 |
