IGC10R60DE

The reverse conducting TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and a monolithically integrated diode

ParametricIGC10R60DE
VCE  max600.0V
IC  max15.0A
VCE(sat)  max5.7V
VGE(th)  min  max4.3V  5.7V
Operating Temperature  min  max-40.0°C  175.0°C
VDS  max600.0V
Sales Product NameIGC10R60DE
OPNIGC10R60DEX1SA2
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Monolithical diode included
  • Optimized V CE(sat) and V F for low conduction losses
  • Smooth switching performance leading to low EMI levels
  • Very tight parameter distribution
  • Operating range of 1 to 20kHz
  • Maximum junction temperature 175°C
  • Short circuit capability of 5μs
Target Applications:
  • Motor drives
功能框图
Data Sheet
TitleSizeDateVersion
IGC10R60DE,EN97 KB31 五月 201301_01
Application Notes
TitleSizeDateVersion
Application Note Discrete IGBT Datasheet ExplanationEN1.6 MB01 十月 201501_00
Simulation Models
TitleSizeDateVersion
Simulation Model IGBT TRENCHSTOP™ 600VEN14 KB22 六月 2012
EN IGC10R60DE
EN igbt-latest-packages
EN IGC142T120T8RH