IGC19T65QE

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

ParametricIGC19T65QE
VCE  max650.0V
IC  max40.0A
VCE(sat)  max2.32V
VGE(th)  min  max4.2V  5.6V
Operating Temperature  min  max-40.0°C  175.0°C
VDS  max650.0V
Sales Product NameIGC19T65QE
OPNIGC19T65QEX1SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Positive temperature coefficient
  • Easy paralleling
Target Applications:
  • Industrial drives
  • Uninterruptible power supplies
  • Welding converters
功能框图
Data Sheet
TitleSizeDateVersion
IGC19T65QE,EN228 KB05 十二月 201201_00
Application Notes
TitleSizeDateVersion
Application Note Discrete IGBT Datasheet ExplanationEN1.6 MB01 十月 201501_00
Simulation Models
TitleSizeDateVersion
Simulation Model IGBT TRENCHSTOP™ 600VEN14 KB22 六月 2012
EN IGC19T65QE
EN igbt-latest-packages
EN IGC142T120T8RH