IGC50T120T8RQ

Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses.

ParametricIGC50T120T8RQ
VCE  max1200.0V
IC  max50.0A
VCE(sat)  max2.42V
VGE(th)  min  max5.3V  6.3V
Operating Temperature  min  max-40.0°C  175.0°C
VDS  max1200.0V
Sales Product NameIGC50T120T8RQ
OPNIGC50T120T8RQX1SA1
Product Statusactive and preferred
Package Name--
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size1
Packing TypeWAFER SAWN
Summary of Features:
  • Positive temperature coefficient
  • Easy paralleling
Target Applications:
  • Industrial drives
  • Uninterruptible power supplies
  • Welding converters
功能框图
Data Sheet
TitleSizeDateVersion
IGC50T120T8RQ,EN74 KB25 六月 201301_01
Application Notes
TitleSizeDateVersion
Application Note Discrete IGBT Datasheet ExplanationEN1.6 MB01 十月 201501_00
Simulation Models
TitleSizeDateVersion
Simulation Model IGBT TRENCHSTOP™ 600VEN14 KB22 六月 2012
EN IGC50T120T8RQ
EN igbt-latest-packages
EN IGC142T120T8RH